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Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

Mishchenko, A.; Tu, J.S.; Cao, Y.; Gorbachev, R.V.; Wallbank, J.R.; Greenaway, M.T.; Morozov, S.V.; Morozov, V.E.; Zhu, M.J.; Wong, S.L.; Withers, F.; Woods, C.R.; Kim, Y.-J.; Watanabe, Kenji; Taniguchi, Takashi; Vdovin, Evgeny E.; Makarovsky, Oleg; Fromhold, T.M.; Fal'ko, V.I.; Geim, A.K.; Eaves, Laurence; Novoselov, K.S.


A. Mishchenko

J.S. Tu

Y. Cao

R.V. Gorbachev

J.R. Wallbank

M.T. Greenaway

S.V. Morozov

V.E. Morozov

M.J. Zhu

S.L. Wong

F. Withers

C.R. Woods

Y.-J. Kim

Kenji Watanabe

Takashi Taniguchi

Evgeny E. Vdovin

V.I. Fal'ko

A.K. Geim

K.S. Novoselov


Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals ave already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes, separated by a layer of hexagonal boron nitride (hBN) in a transistor device, can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induces a tuneable radio-frequency oscillatory current which has potential for future high frequency technology.


Mishchenko, A., Tu, J., Cao, Y., Gorbachev, R., Wallbank, J., Greenaway, M., …Novoselov, K. (2014). Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures. Nature Nanotechnology, 9, 808-813.

Journal Article Type Article
Acceptance Date Aug 5, 2014
Online Publication Date Sep 7, 2014
Publication Date Sep 7, 2014
Deposit Date Aug 4, 2016
Publicly Available Date Aug 4, 2016
Journal Nature Nanotechnology
Print ISSN 1748-3387
Electronic ISSN 1748-3395
Publisher Nature Publishing Group
Peer Reviewed Peer Reviewed
Volume 9
Pages 808-813
Keywords Electronic and spintronic devices; Electronic properties and materials
Public URL
Publisher URL
Copyright Statement Copyright information regarding this work can be found at the following address:


Twist-controlled resonant tunnelling A Mischenko et al Nat Nano 2014 prepublication L Eaves.pdf (7.5 Mb)

Copyright Statement
Copyright information regarding this work can be found at the following address:

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