Overload robust IGBT design for SSCB application

Supono, I.; Urresti, J.; Castellazzi, Alberto; Flores, D.

Abstract

This paper presents an optimised power semiconductor architecture based on the CIGBT approach to be used in solid-state circuit breaker (SSCB) applications where the conduction losses have to be as low as possible without compromising the forward voltage blocking capability. Indeed, a high overcurrent turn-off and short-circuit withstand capabilities have to be ensured. Starting from a standard NPT-IGBT design for switching applications, the results show that the proposed device, which is optimised by the application of the individual clustered concept, offers a reduction in conduction losses of 13%, without compromise on voltage blocking capability. An original design solution is implemented to further ensure short-circuit and overload turn-off capabilities at maximum ambient temperature and twice the nominal rated current.

Citation

Supono, I., Urresti, J., Castellazzi, A., & Flores, D. (in press). Overload robust IGBT design for SSCB application. Microelectronics Reliability, 54(9/10), https://doi.org/10.1016/j.microrel.2014.07.146

• Journal Article Type: Article
• Acceptance Date: Jul 18, 2014
• Online Publication Date: Aug 13, 2014
• Deposit Date: Jul 14, 2016
• Publicly Available Date: Jul 14, 2016
• Journal: Microelectronics Reliability
• Print ISSN: 0026-2714
• Electronic ISSN: 0026-2714
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 54
• Issue: 9/10
• DOI: https://doi.org/10.1016/j.microrel.2014.07.146
• Keywords: Robust; Power device; IGBT; SSCB
• Public URL: https://nottingham-repository.worktribe.com/output/734257
• Publisher URL: http://www.sciencedirect.com/science/article/pii/S0026271414003485