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Photoluminescence dynamics in few-layer InSe

Venanzi, Tommaso; Arora, Himani; Winnerl, Stephan; Pashkin, Alexej; Chava, Phanish; Patane, Amalia; Kovalyuk, Zakhar D.; Kudrynskyi, Zakhar R.; Watanabe, Kenji; Taniguchi, Takashi; Erbe, Artur; Helm, Manfred; Schneider, Harald


Tommaso Venanzi

Himani Arora

Stephan Winnerl

Alexej Pashkin

Phanish Chava

Amalia Patane

Zakhar D. Kovalyuk

Zakhar R. Kudrynskyi

Kenji Watanabe

Takashi Taniguchi

Artur Erbe

Manfred Helm

Harald Schneider


We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we discuss the relative weights of the exciton and electron-hole contributions. Thereafter we investigate the PL dynamics. Two contributions are distinguishable at low temperature: direct bandgap electron-hole and defect-assisted recombination. The two recombination processes have lifetime of τ1 ∼ 8 ns and τ2 ∼ 100 ns, respectively. The relative weights of the direct bandgap and defect-assisted contributions show a strong layer dependence due to the direct-to-indirect bandgap crossover. Electron-hole PL lifetime is limited by population transfer to lower-energy states and no dependence on the number of layers was observed. The lifetime of the defect-assisted recombination gets longer for thinner samples. Finally, we show that the PL lifetime decreases at high temperatures as a consequence of more efficient non-radiative recombinations.

Journal Article Type Article
Publication Date Apr 1, 2020
Journal Physical Review Materials
Electronic ISSN 2475-9953
Publisher American Physical Society
Peer Reviewed Peer Reviewed
Volume 4
Issue 4
Article Number 044001
APA6 Citation Venanzi, T., Arora, H., Winnerl, S., Pashkin, A., Chava, P., Patane, A., …Schneider, H. (2020). Photoluminescence dynamics in few-layer InSe. Physical Review Materials, 4(4),
Publisher URL
Additional Information Photoluminescence dynamics in few-layer InSe, Tommaso Venanzi, Himani Arora, Stephan Winnerl, Alexej Pashkin, Phanish Chava, Amalia Patanè, Zakhar D. Kovalyuk, Zakhar R. Kudrynskyi, Kenji Watanabe, Takashi Taniguchi, Artur Erbe, Manfred Helm, and Harald Schneider
Phys. Rev. Materials 4, 044001


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