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Formation and healing of defects in atomically thin GaSe and InSe

Hopkinson, David G.; Zólyomi, Viktor; Rooney, Aidan P.; Clark, Nick; Terry, Daniel J.; Hamer, Matthew; Lewis, David J.; Allen, Christopher S.; Kirkland, Angus I.; Andreev, Yuri; Kudrynskyi, Zakhar; Kovalyuk, Zakhar; Patanè, Amalia; Fal 'ko, Vladimir I.; Gorbachev, Roman; Haigh, Sarah J.


David G. Hopkinson

Viktor Zólyomi

Aidan P. Rooney

Nick Clark

Daniel J. Terry

Matthew Hamer

David J. Lewis

Christopher S. Allen

Angus I. Kirkland

Yuri Andreev

Zakhar Kudrynskyi

Zakhar Kovalyuk

Amalia Patanè

Vladimir I. Fal 'ko

Roman Gorbachev

Sarah J. Haigh

Journal Article Type Article
Publication Date May 28, 2019
Print ISSN 1936-0851
Publisher American Chemical Society
Peer Reviewed Peer Reviewed
Volume 13
Issue 5
Pages 5112-5123
APA6 Citation Hopkinson, D. G., Zólyomi, V., Rooney, A. P., Clark, N., Terry, D. J., Hamer, M., …Haigh, S. J. (2019). Formation and healing of defects in atomically thin GaSe and InSe. ACS Nano, 13(5), 5112-5123. doi:10.1021/acsnano.8b08253
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Additional Information This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Nano, copyright © American Chemical Society after peer review. To access the final edited and published work see