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Structural, Optical and Electrical Properties of Self-Assembled InAs Quantum Dots Based p–i–n Devices Grown on GaAs Substrate by Molecular Beam Epitaxy for Telecommunication Applications

Lemine, O. M.; Al Huwayz, Maryam; Ibnaouf, K. H.; Alkaoud, A.; Salhi, A.; Henini, M.

Authors

O. M. Lemine

Maryam Al Huwayz

K. H. Ibnaouf

A. Alkaoud

A. Salhi



Abstract

This work aims to investigate the structural, electrical, and optical properties of InAs quantum dots (QDs) grown by Molecular Beam Epitaxy on GaAs substrates. As-made samples were thoroughly characterized using different techniques, including Atomic Force Microscopy (AFM), X-ray diffraction (XRD), and highresolution X-ray diffraction (HRXRD). The patterns of HRXRD revealed an excellent crystallinity of the nanostructure with a maximum diameter of 25 nm as demonstrated by AFM images. The photoluminescence (PL) spectra showed two distinct bands centered at 835 and 1210 nm, and the intensity of these wavelengths increased with decreasing temperature. A redshift accompanied by a decrease in the FWHM as a function of temperature was observed as a consequence of the thermal escape of carriers. The Ideality factor (n), built-in potential energy, and series resistance at different temperatures were also determined from current-voltage characteristics curves.

Journal Article Type Article
Acceptance Date Apr 29, 2022
Online Publication Date May 1, 2022
Publication Date May 1, 2022
Deposit Date Dec 22, 2022
Journal Journal of Nanoelectronics and Optoelectronics
Print ISSN 1555-130X
Peer Reviewed Peer Reviewed
Volume 17
Issue 5
Pages 837-842
DOI https://doi.org/10.1166/jno.2022.3258
Keywords Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
Public URL https://nottingham-repository.worktribe.com/output/14879750
Publisher URL https://www.ingentaconnect.com/content/asp/jno/2022/00000017/00000005/art00014