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On the 3C-SiC/SiO 2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage

Lophitis, Neophytos; Arvanitopoulos, Anastasios; Jennings, Mike R; Mawby, Philip A; Antoniou, Marina

On the 3C-SiC/SiO 2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage Thumbnail


Authors

Anastasios Arvanitopoulos

Mike R Jennings

Philip A Mawby

Marina Antoniou



Abstract

Cubic (3C-) silicon carbide (SiC) metal oxide semiconductor (MOS) devices have the potential to achieve superior performance and reliability. The effective channel mobility can be significantly higher compared to other SiC polytypes due to the smaller concentration of active SiC/SiO2 interface traps and the gate leakage current can be smaller than other SiC polytypes and silicon (Si) because of the more favourable conduction band offset between 3C-SiC and silicon dioxide (SiO2). This work examines the 3C-SiC/SiO2 n-MOS interface and makes use of three independent sets of experimental data to derive and validate a comprehensive model of the inversion layer mobility in 3C-SiC n-MOS structures. The model derived in this work can be used by technology computer aided design (TCAD) tools and can predict the channel mobility with reasonable accuracy for gate voltages ranging 0V-20V, and for temperatures ranging 300K-473K. The ability to reproduce correctly the physical phenomena affecting the 3C-SiC/SiO2 n-MOS channel mobility in TCAD through an appropriately parameterised model is imperative for the design and optimization of MOS devices like MOSFETs and IGBTs and the further development of 3C-SiC device technology.

Citation

Lophitis, N., Arvanitopoulos, A., Jennings, M. R., Mawby, P. A., & Antoniou, M. (2022). On the 3C-SiC/SiO 2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage. . https://doi.org/10.1109/WiPDAEurope55971.2022.9936319

Conference Name Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe)
Conference Location Coventry, UK
Start Date Sep 18, 2022
End Date Sep 19, 2022
Acceptance Date Aug 23, 2022
Online Publication Date Nov 8, 2022
Publication Date Sep 19, 2022
Deposit Date Nov 3, 2022
Publicly Available Date Nov 3, 2022
Publisher Institute of Electrical and Electronics Engineers
ISBN 9781665488143
DOI https://doi.org/10.1109/WiPDAEurope55971.2022.9936319
Keywords Cubic; Silicon Carbide; 3C-; SiC; channel mobility; Metal Oxide Semiconductor; MOS; TCAD; model
Public URL https://nottingham-repository.worktribe.com/output/13177346
Publisher URL https://ieeexplore.ieee.org/document/9936319
Related Public URLs https://warwick.ac.uk/fac/sci/eng/wipda2022/
Additional Information © 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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