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Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules

Stella, F.; Olanrewaju, O.; Yang, Z.; Castellazzi, A.; Pellegrino, G.

Authors

F. Stella

O. Olanrewaju

Z. Yang

A. Castellazzi

G. Pellegrino



Abstract

© 2018 Elsevier Ltd The ability to monitor temperature variations during the actual operation of power modules is key to reliability investigations and the development of lifetime prediction strategies. This paper proposes an original solution, specifically devised with novel fast-switching silicon carbide (SiC) power MOSFETs in mind. The results show ability to track temperature variations resulting from active power cycling of the devices, including high speed transients, thus enabling to discriminate among different potential failure mechanisms. Validation of the proposed methodology and its accuracy is carried out with the support of infrared thermography.

Journal Article Type Article
Publication Date Sep 1, 2018
Journal Microelectronics Reliability
Print ISSN 0026-2714
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 88-90
Pages 615-619
APA6 Citation Stella, F., Olanrewaju, O., Yang, Z., Castellazzi, A., & Pellegrino, G. (2018). Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules. Microelectronics Reliability, 88-90, 615-619. https://doi.org/10.1016/j.microrel.2018.07.072
DOI https://doi.org/10.1016/j.microrel.2018.07.072
Keywords SiC power MOSFET; On-state voltage; Active thermal control; Junction temperature monitoring; Infrared thermography
Additional Information This article is maintained by: Elsevier; Article Title: Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules; Journal Title: Microelectronics Reliability; CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.microrel.2018.07.072; Content Type: article; Copyright: © 2018 Elsevier Ltd. All rights reserved.

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