Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules
Stella, F.; Olanrewaju, O.; Yang, Z.; Castellazzi, A.; Pellegrino, G.
© 2018 Elsevier Ltd The ability to monitor temperature variations during the actual operation of power modules is key to reliability investigations and the development of lifetime prediction strategies. This paper proposes an original solution, specifically devised with novel fast-switching silicon carbide (SiC) power MOSFETs in mind. The results show ability to track temperature variations resulting from active power cycling of the devices, including high speed transients, thus enabling to discriminate among different potential failure mechanisms. Validation of the proposed methodology and its accuracy is carried out with the support of infrared thermography.
|Journal Article Type||Article|
|Publication Date||Sep 1, 2018|
|Peer Reviewed||Peer Reviewed|
|APA6 Citation||Stella, F., Olanrewaju, O., Yang, Z., Castellazzi, A., & Pellegrino, G. (2018). Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules. Microelectronics Reliability, 88-90, 615-619. https://doi.org/10.1016/j.microrel.2018.07.072|
|Keywords||SiC power MOSFET; On-state voltage; Active thermal control; Junction temperature monitoring; Infrared thermography|
|Additional Information||This article is maintained by: Elsevier; Article Title: Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules; Journal Title: Microelectronics Reliability; CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.microrel.2018.07.072; Content Type: article; Copyright: © 2018 Elsevier Ltd. All rights reserved.|
Experimentally Validated Methodology For Real-time Temperature Cycle Tracking In SiC Power Modules
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