Parametric study of optimum gate-resistance for performance and short-circuit robustness of novel half-bridge IGBT modules

Cheraghinezhad, Alireza; Hussein, Abdallah; Castellazzi, Alberto; Saito, Katsuaki

Abstract

This paper jointly investigates the switching performance and the short-circuit (S.C) turn off behavior of a novel half-bridge (2in1) IGBT power module concept with the low stray inductance (L?), which has been available in the market since 2015. Since this package was designed for improving the performance of Si-based switches and is a pioneering solution for designing WBG switches through reducing the L? of the switch itself, investigations of S.C are an important task for both researchers and designers. The performance of a Half-bridge (2in1) Silicon N-channel IGBT has been examined with different temperatures, switching transients and testing under S.C conditions, where the extracted results offer a clear overview of S.C of Half-bridge (2in1) package and trade-offs between switch losses and short-circuit safe operating area (SCSOA), and finally prevention of false turn-on after short-circuiting due to L?.

Citation

Cheraghinezhad, A., Hussein, A., Castellazzi, A., & Saito, K. (in press). Parametric study of optimum gate-resistance for performance and short-circuit robustness of novel half-bridge IGBT modules

• Conference Name: 5th International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles (ESARS) and International Transportation Electrification Conference (ITECH)
• Start Date: Nov 7, 2018
• End Date: Nov 9, 2018
• Acceptance Date: Jul 26, 2018
• Deposit Date: Oct 26, 2018
• Publicly Available Date: Oct 26, 2018
• Book Title: NA
• Chapter Number: NA
• ISBN: NA
• Public URL: https://nottingham-repository.worktribe.com/output/1194654
• Related Public URLs: http://www.esars.eu/wp2018/