Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer

Skinner, Tim D.; Gallagher, Bryan; Jungwirth, Tomas; Cunningham, L. K.; Campion, R.P.; Kurebayashi, H.; Ferguson, Andrew J.

doi:10.1038/ncomms7730

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Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer

Authors

Tim D. Skinner

Bryan Gallagher

Kamil

TOMAS JUNGWIRTH tomas.jungwirth@nottingham.ac.uk
Research Professor of Ferromagnetic Semiconductors

L. K. Cunningham

RICHARD CAMPION richard.campion@nottingham.ac.uk
Principal Research Fellow

H. Kurebayashi

Andrew J. Ferguson

Citation

Skinner, T. D., Gallagher, B., Olejník, K., Jungwirth, T., Cunningham, L. K., Campion, R., …Ferguson, A. J. (2015). Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer. Nature Communications, 6, 1-6. https://doi.org/10.1038/ncomms7730

Journal Article Type	Article
Acceptance Date	Mar 1, 2015
Publication Date	Mar 31, 2015
Deposit Date	Oct 13, 2017
Journal	Nature Communications
Electronic ISSN	2041-1723
Publisher	Nature Publishing Group
Peer Reviewed	Peer Reviewed
Volume	6
Article Number	6370
Pages	1-6
DOI	https://doi.org/10.1038/ncomms7730
Public URL	https://nottingham-repository.worktribe.com/output/1115094
Publisher URL	https://www.nature.com/articles/ncomms7730
PMID	00035304