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Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy

Al Huwayz, M.; Galeti, H.V.A.; Lemine, O. M.; Ibnaouf, K. H.; Alkaoud, A.; Alaskar, Y.; Salhi, A.; Alhassan, S.; Alotaibi, S.; Almalki, A.; Almunyif, A.; Alhassni, A.; Jameel, D. A.; Gobato, Y. Galvão; Henini, M.

Authors

M. Al Huwayz

H.V.A. Galeti

O. M. Lemine

K. H. Ibnaouf

A. Alkaoud

Y. Alaskar

A. Salhi

S. Alhassan

S. Alotaibi

A. Almalki

A. Almunyif

A. Alhassni

D. A. Jameel

Y. Galvão Gobato



Abstract

Extensive work on InAs quantum dots grown on GaAs substrates has been reported in the literature. However, research in the use of different substrate materials such as silicon to achieve an ideal and full integration of photonic and electronic systems is still a challenge. In this work we have investigated the effect of the substrate material (Si and GaAs) and strain reducing layer on the optical properties of InAs quantum dots for possible applications in laser devices grown by Molecular Beam Epitaxy. Two InAs quantum dots structures with similar active regions grown on GaAs and Si substrates using strain reducing layer consisting of InAs QDs/6 nm In0.15Ga0.85As have been investigated. Atomic Force Microscopy, Transmission Electron Microscopy, and photoluminescence have been used for the characterization of the samples. We have observed a red shift of the InAs QD photoluminescence peak energy for the sample grown on Si substrate as compared to the sample grown on GaAs substrate, which was associated with residual biaxial strain from the Si/GaAs heterointerface. This red-shift of the photoluminescence peak energy is accompanied by a broadening of the photoluminescence spectrum from ∼31 meV to a value of ∼46 meV. This broadening is attributed to the quantum dots size inhomogeneity increase for samples grown on Si substrate. This result open new insights for the controlling the emission of InAs quantum dots for photonic devices integration using Si substrates.

Citation

Al Huwayz, M., Galeti, H., Lemine, O. M., Ibnaouf, K. H., Alkaoud, A., Alaskar, Y., …Henini, M. (2022). Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy. Journal of Luminescence, 251, Article 119155. https://doi.org/10.1016/j.jlumin.2022.119155

Journal Article Type Article
Acceptance Date Jul 19, 2022
Online Publication Date Aug 10, 2022
Publication Date 2022-11
Deposit Date Sep 11, 2022
Publicly Available Date Aug 11, 2023
Journal Journal of Luminescence
Print ISSN 0022-2313
Electronic ISSN 1872-7883
Publisher Elsevier BV
Peer Reviewed Peer Reviewed
Volume 251
Article Number 119155
DOI https://doi.org/10.1016/j.jlumin.2022.119155
Keywords Condensed Matter Physics; Biochemistry; General Chemistry; Atomic and Molecular Physics, and Optics; Biophysics
Public URL https://nottingham-repository.worktribe.com/output/11135039
Publisher URL https://www.sciencedirect.com/science/article/abs/pii/S0022231322004306?via%3Dihub

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