Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy

Al Huwayz, M.; Galeti, H.V.A.; Lemine, O. M.; Ibnaouf, K. H.; Alkaoud, A.; Alaskar, Y.; Salhi, A.; Alhassan, S.; Alotaibi, S.; Almalki, A.; Almunyif, A.; Alhassni, A.; Jameel, D. A.; Gobato, Y. Galvão; Henini, M.

Abstract

Extensive work on InAs quantum dots grown on GaAs substrates has been reported in the literature. However, research in the use of different substrate materials such as silicon to achieve an ideal and full integration of photonic and electronic systems is still a challenge. In this work we have investigated the effect of the substrate material (Si and GaAs) and strain reducing layer on the optical properties of InAs quantum dots for possible applications in laser devices grown by Molecular Beam Epitaxy. Two InAs quantum dots structures with similar active regions grown on GaAs and Si substrates using strain reducing layer consisting of InAs QDs/6 nm In0.15Ga0.85As have been investigated. Atomic Force Microscopy, Transmission Electron Microscopy, and photoluminescence have been used for the characterization of the samples. We have observed a red shift of the InAs QD photoluminescence peak energy for the sample grown on Si substrate as compared to the sample grown on GaAs substrate, which was associated with residual biaxial strain from the Si/GaAs heterointerface. This red-shift of the photoluminescence peak energy is accompanied by a broadening of the photoluminescence spectrum from ∼31 meV to a value of ∼46 meV. This broadening is attributed to the quantum dots size inhomogeneity increase for samples grown on Si substrate. This result open new insights for the controlling the emission of InAs quantum dots for photonic devices integration using Si substrates.

Citation

Al Huwayz, M., Galeti, H., Lemine, O. M., Ibnaouf, K. H., Alkaoud, A., Alaskar, Y., …Henini, M. (2022). Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy. Journal of Luminescence, 251, Article 119155. https://doi.org/10.1016/j.jlumin.2022.119155

• Journal Article Type: Article
• Acceptance Date: Jul 19, 2022
• Online Publication Date: Aug 10, 2022
• Publication Date: 2022-11
• Deposit Date: Sep 11, 2022
• Publicly Available Date: Aug 11, 2023
• Journal: Journal of Luminescence
• Print ISSN: 0022-2313
• Electronic ISSN: 1872-7883
• Publisher: Elsevier BV
• Peer Reviewed: Peer Reviewed
• Volume: 251
• Article Number: 119155
• DOI: https://doi.org/10.1016/j.jlumin.2022.119155
• Keywords: Condensed Matter Physics; Biochemistry; General Chemistry; Atomic and Molecular Physics, and Optics; Biophysics
• Public URL: https://nottingham-repository.worktribe.com/output/11135039
• Publisher URL: https://www.sciencedirect.com/science/article/abs/pii/S0022231322004306?via%3Dihub