Skip to main content

Research Repository

Advanced Search

Sub-terahertz amplification in a semiconductor superlattice with moving charge domains

Makarov, V.V.; Hramov, A.E.; Koronovskii, A.A.; Alekseev, K.N.; Maximenko, V.A.; Greenaway, M.T.; Fromhold, T.M.; Moskalenko, O.I.; Balanov, A.G.

Authors

V.V. Makarov

A.E. Hramov

A.A. Koronovskii

K.N. Alekseev

V.A. Maximenko

M.T. Greenaway

O.I. Moskalenko

A.G. Balanov



Abstract

We theoretically study the high-frequency response of charge domains traveling through a strongly coupled semiconductor superlattice with an applied harmonic electromagnetic signal. Our calculations show that the superlattice alone can amplify signals with a frequency close to the domain transient frequency. Moreover, we show that if the superlattice is connected to a resonator, amplification becomes possible for much higher frequencies of the external signal (several hundred GHz). These promising results open the way to using semiconductor superlattices as efficient sub-THz amplifiers.

Citation

Makarov, V., Hramov, A., Koronovskii, A., Alekseev, K., Maximenko, V., Greenaway, M., …Balanov, A. (2015). Sub-terahertz amplification in a semiconductor superlattice with moving charge domains. Applied Physics Letters, 106(4), Article 043503. https://doi.org/10.1063/1.4906531

Journal Article Type Article
Acceptance Date Jan 13, 2015
Online Publication Date Jan 29, 2015
Publication Date Feb 28, 2015
Deposit Date Feb 6, 2018
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 106
Issue 4
Article Number 043503
DOI https://doi.org/10.1063/1.4906531
Public URL https://nottingham-repository.worktribe.com/output/1112154
Publisher URL https://aip.scitation.org/doi/10.1063/1.4906531
PMID 00034899