Outputs (41)

Quantum nature of charge transport in inkjet-printed graphene revealed in high magnetic fields up to 60T (2024)
Journal Article
Cottam, N. D., Wang, F., Austin, J. S., Tuck, C. J., Hague, R., Fromhold, M., …Turyanska, L. (2024). Quantum nature of charge transport in inkjet-printed graphene revealed in high magnetic fields up to 60T. Small, Article 2311416. https://doi.org/10.1002/smll.202311416

Inkjet‐printing of graphene, iGr, provides an alternative route for the fabrication of highly conductive and flexible graphene films for use in devices. However, the contribution of quantum phenomena associated with 2D single layer graphene, SLG, to... Read More about Quantum nature of charge transport in inkjet-printed graphene revealed in high magnetic fields up to 60T.

Bi2Se3 interlayer treatments affecting the Y3Fe5O12 (YIG) platinum spin Seebeck effect (2023)
Journal Article
Hu, Y., Weir, M. P., Pereira, H. J., Amin, O. J., Pitcairn, J., Cliffe, M. J., …Woodward, S. (2023). Bi2Se3 interlayer treatments affecting the Y3Fe5O12 (YIG) platinum spin Seebeck effect. Applied Physics Letters, 123(22), Article 223902. https://doi.org/10.1063/5.0157778

In this work, we present a method to enhance the longitudinal spin Seebeck effect at platinum/yttrium iron garnet (Pt/YIG) interfaces. The introduction of a partial interlayer of bismuth selenide (Bi2Se3, 2.5% surface coverage) interfaces significant... Read More about Bi2Se3 interlayer treatments affecting the Y3Fe5O12 (YIG) platinum spin Seebeck effect.

Conducting poly(3,4-ethylenedioxythiophene) materials with sustainable carrageenan counter-ions and their thermoelectric properties (2023)
Journal Article
Duan, Z., Phillips, J., Liirò-Peluso, L., Woodward, S., Makarovsky, O., Weir, M. P., …Amabilino, D. B. (2023). Conducting poly(3,4-ethylenedioxythiophene) materials with sustainable carrageenan counter-ions and their thermoelectric properties. Materials Advances, 22(4), Article 5573. https://doi.org/10.1039/d3ma00547j

The preparation and properties of conducting polymers comprising poly(3,4-ethylenedioxythiophene) (PEDOT) and two types of carrageenan – each on their own or combined – as counter-ions are described. The aim of the work is to provide alternative, mor... Read More about Conducting poly(3,4-ethylenedioxythiophene) materials with sustainable carrageenan counter-ions and their thermoelectric properties.

Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing (2023)
Journal Article
Shiffa, M., Dewes, B. T., Bradford, J., Cottam, N. D., Cheng, T. S., Mellor, C. J., …Patanè, A. (2024). Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing. Small, 20(7), Article 2305865. https://doi.org/10.1002/smll.202305865

2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top‐down approaches to their fabrication, such as exfoliation of bulk crystals by “scotch‐tape,” are widely used, but have limi... Read More about Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.

Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure (2023)
Journal Article
Dey, A., Cottam, N., Makarovskiy, O., Yan, W., Mišeikis, V., Coletti, C., …Patanè, A. (2023). Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure. Communications Physics, 6, Article 216. https://doi.org/10.1038/s42005-023-01340-8

The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact... Read More about Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure.

Graphene FETs with high and low mobilities have universal temperature-dependent properties (2023)
Journal Article
Gosling, J., Morozov, S. V., Vdovin, E. E., Greenaway, M. T., Khanin, Y. N., Kudrynskyi, Z., …Makarovsky, O. (2023). Graphene FETs with high and low mobilities have universal temperature-dependent properties. Nanotechnology, 34(12), Article 125702. https://doi.org/10.1088/1361-6528/aca981

We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity,ρ, on gate voltage,Vg, for a series of monolayer graphene field effect transistors with mobili... Read More about Graphene FETs with high and low mobilities have universal temperature-dependent properties.

Photosensitisation of inkjet printed graphene with stable all-inorganic perovskite nanocrystals (2022)
Journal Article
Austin, J. S., Cottam, N. D., Zhang, C., Wang, F., Gosling, J. H., Nelson-Dummet, O., …Turyanska, L. (2023). Photosensitisation of inkjet printed graphene with stable all-inorganic perovskite nanocrystals. Nanoscale, 15(5), 2134–2142. https://doi.org/10.1039/d2nr06429d

All-inorganic perovskite nanocrystals (NCs) with enhanced environmental stability are of particular interest for optoelectronic applications. Here we report on the formulation of CsPbX3 (X is Br or I) inks for inkjet deposition and utilise these NCs... Read More about Photosensitisation of inkjet printed graphene with stable all-inorganic perovskite nanocrystals.

Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors (2022)
Journal Article
Cottam, N. D., Austin, J. S., Zhang, C., Patanè, A., Escoffier, W., Goiran, M., …Makarovsky, O. (2023). Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors. Advanced Electronic Materials, 9(2), Article 2200995. https://doi.org/10.1002/aelm.202200995

Stable all-inorganic CsPbX3 perovskite nanocrystals (PNCs) with high optical yield can be used in combination with graphene as photon sensors with high responsivity (up to 106 A W−1) in the VIS-UV range. The performance of these perovskite/graphene f... Read More about Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors.

Van der Waals interfaces in multilayer junctions for ultraviolet photodetection (2022)
Journal Article
Xie, S., Shiffa, M., Shiffa, M., Kudrynskyi, Z. R., Makarovskiy, O., Kovalyuk, Z. D., …Patanè, A. (2022). Van der Waals interfaces in multilayer junctions for ultraviolet photodetection. npj 2D Materials and Applications, 6(1), Article 61. https://doi.org/10.1038/s41699-022-00338-0

Developments in semiconductor science have led to the miniaturization and improvement of light detection technologies for many applications. However, traditional pn-junctions or three-dimensional device geometries for detection of ultraviolet (UV) li... Read More about Van der Waals interfaces in multilayer junctions for ultraviolet photodetection.

Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6 (2022)
Journal Article
Dey, A., Yan, W., Balakrishnan, N., Xie, S., Kudrynskyi, Z. R., Makarovskiy, O., …Patanè, A. (2022). Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6. 2D Materials, 9(3), Article 035003. https://doi.org/10.1088/2053-1583/ac6191

Ferroelectricity at the nanometre scale can drive the miniaturisation and wide application of ferroelectric devices for memory and sensing applications. The two-dimensional van der Waals (2D-vdWs) ferroelectrics CuInP2S6 (CIPS) has attracted much att... Read More about Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6.