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Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe (2018)
Journal Article
Balakrishnan, N., Steer, E. D., Smith, E. F., Kudrynskyi, Z. R., Kovalyuk, Z. D., Eaves, L., …Beton, P. H. (2018). Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe. 2D Materials, 5(3), https://doi.org/10.1088/2053-1583/aac479

We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different p... Read More about Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe.

Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data (2018)
Journal Article
Rahe, P., Smith, E. F., Wollschläger, J., & Moriarty, P. J. (2018). Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data. Physical Review B, 97(12), https://doi.org/10.1103/PhysRevB.97.125418

We investigate the CaF1/Si(111) interface using a combination of high-resolution scanning tunnelling and noncontact atomic force microscopy operated at cryogenic temperature as well as x-ray photoelectron spectroscopy. Submonolayer CaF1 films grown a... Read More about Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data.

Supramolecular networks stabilise and functionalise black phosphorus (2017)
Journal Article
Korolkov, V. V., Timokhin, I. G., Haubrichs, R., Smith, E. F., Yang, L., Yang, S., …Beton, P. H. (2017). Supramolecular networks stabilise and functionalise black phosphorus. Nature Communications, 8(1), Article 1385. https://doi.org/10.1038/s41467-017-01797-6

© 2017 The Author(s). The limited stability of the surface of black phosphorus (BP) under atmospheric conditions is a significant constraint on the exploitation of this layered material and its few layer analogue, phosphorene, as an optoelectronic ma... Read More about Supramolecular networks stabilise and functionalise black phosphorus.

Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation (2017)
Journal Article
Balakrishnan, N., Kudrynskyi, Z. R., Smith, E. F., Fay, M. W., Makarovsky, O., Kovalyuk, Z. D., …Patanè, A. (2017). Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation. 2D Materials, 4(2), Article 025043. https://doi.org/10.1088/2053-1583/aa61e0

Exploitation of two-dimensional (2D) van der Waals (vdW) crystals can be hindered by the deterioration of the crystal surface over time due to oxidation. On the other hand, the existence of a stable oxide at room temperature can offer prospects for s... Read More about Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation.

Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy (2016)
Journal Article
Cho, Y., Summerfield, A., Davies, A., Cheng, T. S., Smith, E. F., Mellor, C. J., …Novikov, S. V. (2016). Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy. Scientific Reports, 6(1), Article 34474. https://doi.org/10.1038/srep34474

We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting... Read More about Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy.

Quantum confinement and photoresponsivity of ?-In2Se3 nanosheets grown by physical vapour transport (2016)
Journal Article
Balakrishnan, N., Staddon, C. R., Smith, E. F., Stec, J., Gay, D., Mudd, G. W., …Beton, P. H. (in press). Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport. 2D Materials, 3(2), 1-8. https://doi.org/10.1088/2053-1583/3/2/025030

We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature and exhibit a blue-shift o... Read More about Quantum confinement and photoresponsivity of ?-In2Se3 nanosheets grown by physical vapour transport.