Outputs (9)

Optically Controlled Memristor Using Hybrid ZnO Nanorod/Polymer Material (2023)
Conference Proceeding
Jaafar, A. H., & Kemp, N. T. (2023). Optically Controlled Memristor Using Hybrid ZnO Nanorod/Polymer Material. In NANOARCH '23: Proceedings of the 18th ACM International Symposium on Nanoscale Architectures. https://doi.org/10.1145/3611315.3633257

Controlling of resistive switching properties by optical means opens the route to new optoelectronics that can be written optically and read electronically. In this work, we demonstrate optically controlled memristors realized with a hybrid material... Read More about Optically Controlled Memristor Using Hybrid ZnO Nanorod/Polymer Material.

Printed and flexible organic and inorganic memristor devices for non-volatile memory applications (2023)
Journal Article
Jaafar, A. H., Gee, A., & Kemp, N. T. (2023). Printed and flexible organic and inorganic memristor devices for non-volatile memory applications. Journal of Physics D: Applied Physics, 56(50), Article 503002. https://doi.org/10.1088/1361-6463/acfaaa

The electronics market is highly competitive and driven by consumers desire for the latest and most sophisticated devices at the lowest cost. In the last decade there has been increasing interest in printing electronic materials on lightweight and fl... Read More about Printed and flexible organic and inorganic memristor devices for non-volatile memory applications.

Optoelectronic Switching Memory Based on ZnO Nanoparticle/Polymer Nanocomposites (2023)
Journal Article
Jaafar, A. H., Lowe, C., Gee, A., & Kemp, N. T. (2023). Optoelectronic Switching Memory Based on ZnO Nanoparticle/Polymer Nanocomposites. ACS Applied Polymer Materials, 5(4), 2367-2373. https://doi.org/10.1021/acsapm.2c02034

Optoelectronic switching memories are emerging as practical candidates for applications of optically tunable neuromorphic computing systems and artificial vision systems. Here, we report on the fabrication of an optoelectronic switching memory device... Read More about Optoelectronic Switching Memory Based on ZnO Nanoparticle/Polymer Nanocomposites.

Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films (2022)
Journal Article
Jaafar, A. H., Meng, L., Zhang, T., Guo, D., Newbrook, D., Zhang, W., …Huang, R. (2022). Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films. ACS Applied Nano Materials, 5(12), 17711-17720. https://doi.org/10.1021/acsanm.2c03639

We report on the development of hybrid organic-inorganic material-based flexible memristor devices made by a fast and simple electrochemical fabrication method. The devices consist of a bilayer of poly(methyl methacrylate) (PMMA) and Te-rich GeSbTe c... Read More about Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films.

3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing (2022)
Journal Article
Jaafar, A. H., Shao, L., Dai, P., Zhang, T., Han, Y., Beanland, R., …Huang, R. (2022). 3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing. Nanoscale, 14(46), 17170-17181. https://doi.org/10.1039/d2nr05012a

Memristors are emerging as promising candidates for practical application in reservoir computing systems that are capable of temporal information processing. Here, we experimentally implement a physical reservoir computing system using resistive memr... Read More about 3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing.

Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices (2022)
Journal Article
Wallace, A. G., King, R. P., Zhelev, N., Jaafar, A. H., Levason, W., Huang, R., …Bartlett, P. N. (2022). Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices. Electrochimica Acta, 432, Article 141162. https://doi.org/10.1016/j.electacta.2022.141162

In this paper we report the use of Na3[SbS4].9H2O as a single source precursor for the electrodeposition of Sb2S3 from aqueous electrolyte at pH 9.1. We present the electrochemistry of the [SbS4]3− anion and the redox processes observed for the depos... Read More about Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices.

Optical Memristors: Review of Switching Mechanisms and New Computing Paradigms (2022)
Book Chapter
Gee, A., Jaafar, A. H., & Kemp, N. T. (2022). Optical Memristors: Review of Switching Mechanisms and New Computing Paradigms. In L. O. Chua, R. Tetzlaff, & A. Slavova (Eds.), Memristor Computing Systems (219-244). Springer International Publishing. https://doi.org/10.1007/978-3-030-90582-8_10

Memristors are known for their low-power non-volatile memory operation, high scalability and simple two-terminal geometry. Their ability to emulate the analogue switching and learning properties of biological synapses has also emerged as a significan... Read More about Optical Memristors: Review of Switching Mechanisms and New Computing Paradigms.

Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays (2021)
Journal Article
Jaafar, A. H., Meng, L., Noori, Y. J., Zhang, W., Han, Y., Beanland, R., …Bartlett, P. N. (2021). Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays. Journal of Physical Chemistry C, 125(47), 26247-26255. https://doi.org/10.1021/acs.jpcc.1c08549

In this work, we report on the fabrication of resistive random-access memory cells based on electrodeposited GeSbTe material between TiN top and bottom electrodes in a crossbar architecture. The cells exhibit asymmetric bipolar resistive switching ch... Read More about Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays.

Nanorods Versus Nanoparticles: A Comparison Study of Au/ZnO-PMMA/Au Non-Volatile Memory Devices Showing the Importance of Nanostructure Geometry on Conduction Mechanisms and Switching Properties (2019)
Journal Article
Jaafar, A. H., Gee, A., & Kemp, N. T. (2020). Nanorods Versus Nanoparticles: A Comparison Study of Au/ZnO-PMMA/Au Non-Volatile Memory Devices Showing the Importance of Nanostructure Geometry on Conduction Mechanisms and Switching Properties. IEEE Transactions on Nanotechnology, 19, 236-246. https://doi.org/10.1109/TNANO.2019.2949759

Hybrid organic-inorganic devices offer a simple and low cost route to the fabrication of resistive memory devices. However the switching and conduction mechanisms are not well established. This work compares ZnO-based devices made in the same manner... Read More about Nanorods Versus Nanoparticles: A Comparison Study of Au/ZnO-PMMA/Au Non-Volatile Memory Devices Showing the Importance of Nanostructure Geometry on Conduction Mechanisms and Switching Properties.