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All Outputs (21)

Design Considerations for High-Voltage High-Current Bi-Directional DC Solid-State Circuit Breaker (SSCB) for Aerospace Applications (2021)
Conference Proceeding
Fayyaz, A., Wang, Z., Ortiz, M. U., Yang, T., & Wheeler, P. (2021). Design Considerations for High-Voltage High-Current Bi-Directional DC Solid-State Circuit Breaker (SSCB) for Aerospace Applications. In 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe). https://doi.org/10.23919/epe21ecceeurope50061.2021.9570659

Design of a high-voltage and high-current solid-state circuit breaker (SSCB) for aerospace applications is highly challenging, as the overall system should comply with the most stringent operating environment. In addition, the implemented power semic... Read More about Design Considerations for High-Voltage High-Current Bi-Directional DC Solid-State Circuit Breaker (SSCB) for Aerospace Applications.

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation (2019)
Conference Proceeding
Asllani, B., Morel, H., Planson, D., Fayyaz, A., & Castellazzi, A. (2019). SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation. . https://doi.org/10.1109/ESARS-ITEC.2018.8607547

V TH subthreshold hysteresis is an aspect of MOSFET's threshold instabilities that is gaining interests in last few years. As a matter of fact, reliability concerns are raised due to the fluctuation of the threshold voltage depending on the previous... Read More about SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation.

Effect of Parameters Variability on the Performance of SiC MOSFET Modules (2018)
Conference Proceeding
Borghese, A., Riccio, M., Breglio, G., Fayyaz, A., Castellazzi, A., Irace, A., & Marese, L. (2018). Effect of Parameters Variability on the Performance of SiC MOSFET Modules. In Proceedings on 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC) (1-5). https://doi.org/10.1109/ESARS-ITEC.2018.8607593

This paper introduces a statistical analysis of the impact of devices parameters dispersion on the performances of parallel connected SiC MOSFETs. To this purpose, the statistical fluctuations of threshold voltage and current factor are evaluated on... Read More about Effect of Parameters Variability on the Performance of SiC MOSFET Modules.

VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs (2018)
Journal Article
Asllani, B., Fayyaz, A., Castellazzi, A., Morel, H., & Planson, D. (2018). VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectronics Reliability, 88-90, 604-609. https://doi.org/10.1016/j.microrel.2018.06.047

VTH subthreshold hysteresis measured in commercially available 4H-SiC MOSFET is more pronounced in trench than in planar ones. All planar devices from different manufacturers exhibit an inverse temperature dependence, with the hysteresis amplitude re... Read More about VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs.

Avalanche ruggedness of parallel SiC power MOSFETs (2018)
Journal Article
Fayyaz, A., Asllani, B., Castellazzi, A., Riccio, M., & Irace, A. (2018). Avalanche ruggedness of parallel SiC power MOSFETs. Microelectronics Reliability, 88-90, 666-670. https://doi.org/10.1016/j.microrel.2018.06.038

© 2018 Elsevier Ltd The aim of this paper is to investigate the impact of electro-thermal device parameter spread on the avalanche ruggedness of parallel silicon carbide (SiC) power MOSFETs representative of multi-chip layout within an integrated pow... Read More about Avalanche ruggedness of parallel SiC power MOSFETs.

Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module (2018)
Conference Proceeding
Riccio, M., Borghese, A., Romano, G., D 'alessandro, V., Fayyaz, A., Castellazzi, A., …Irace, A. (2018). Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module. In Power Electronics and Applications (EPE'18 ECCE Europe), 2018 20th European Conference

In this contribution, a previously developed temperature-dependent SPICE model for SiC power MOSFETs is calibrated on experimental data of commercially available devices. Thereafter, its features are exploited for dynamic ET simulations of paralleled... Read More about Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module.

P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness (2018)
Conference Proceeding
Wu, H., Fayyaz, A., & Castellazzi, A. (2018). P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness. In Proceedings of the 30th International Symposium on Power Semiconductor Devices and ICs, 13-17 May 2018, Chicago, USA (232-235). https://doi.org/10.1109/ISPSD.2018.8393645

This paper proposes the design and prototype development and testing of a gate-driver which enables to jointly optimize the performance in application of gate-injection type high electron mobility transistors, taking into account a number of diverse... Read More about P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness.

SiC MOSFET device parameter spread and ruggedness of parallel multichip structures (2018)
Journal Article
Castellazzi, A., Fayyaz, A., & Kraus, R. (2018). SiC MOSFET device parameter spread and ruggedness of parallel multichip structures. Materials Science Forum, 924, (811-817). doi:10.4028/www.scientific.net/msf.924.811. ISSN 0255-5476

This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated comme... Read More about SiC MOSFET device parameter spread and ruggedness of parallel multichip structures.

Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling (2018)
Conference Proceeding
Castellazzi, A., Fayyaz, A., Gurpinar, E., Hussein, A., Li, J., & Mouawad, B. (2018). Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling. In The 2018 International Power Electronics Conference - EECE Asia - IPEC 2018 (130-136). https://doi.org/10.23919/IPEC.2018.8507834

Taking full advantage of the superior characteristics of SiC Power MOSFETs in the application requires the development of bespoke packaging solutions. Their design needs to thoroughly encompass electromagnetic and electro-thermal aspects to yield maj... Read More about Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling.

Single pulse short-circuit robustness and repetitive stress aging of GaN GITs (2018)
Conference Proceeding
Castellazzi, A., Fayyaz, A., Zhu, S., Oeder, T., & Pfost, M. (2018). Single pulse short-circuit robustness and repetitive stress aging of GaN GITs. In Proceedings of 2018 IEEE International Reliability Physics Symposium (IRPS), 11-15 March 2018, Burlingame, California, USA (4E.1-1-4E.1-10). https://doi.org/10.1109/IRPS.2018.8353593

Short-circuit withstand capability is a key requirement for semiconductor power devices in a number of strategic application domains, including traction, renewable energies and power distribution. Indeed, though clearly a non-intentional operational... Read More about Single pulse short-circuit robustness and repetitive stress aging of GaN GITs.

Static and dynamic TSEPs of SiC and GaN transistors (2018)
Conference Proceeding
Zhu, S., Fayyaz, A., & Castellazzi, A. (2018). Static and dynamic TSEPs of SiC and GaN transistors.

This paper investigates the static and dynamic temperature sensitive electrical parameters (TSEPs) for both SiC and GaN transistors. It is shown that both the qualitative and quantitative temperature characteristics of these parameters are various wh... Read More about Static and dynamic TSEPs of SiC and GaN transistors.

Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs (2017)
Conference Proceeding
Fayyaz, A., Castellazzi, A., Romano, G., Riccio, M., Urresti, J., & Wright, N. (2017). Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs.

This paper investigates the effect of negative gate bias voltage (VGS) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device’s ability to withstand energy dissipation during avalanche reg... Read More about Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs.

Transient out-of-SOA robustness of SiC power MOSFETs (2017)
Conference Proceeding
Castellazzi, A., Fayyaz, A., Romano, G., Riccio, M., Irace, A., Urresti-Ibanez, J., & Wright, N. (2017). Transient out-of-SOA robustness of SiC power MOSFETs.

Beyond their main function of high-frequency switches in modulated power converters, solid-state power devices are required in many application domains to also ensure robustness against a number of overload operational conditions. This paper consider... Read More about Transient out-of-SOA robustness of SiC power MOSFETs.

A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs (2017)
Journal Article
Fayyaz, A., Romano, G., Urresti, J., Riccio, M., Castellazzi, A., Irace, A., & Wright, N. (2017). A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs. Energies, 10(4), Article 452. https://doi.org/10.3390/en10040452

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying... Read More about A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs.

UIS failure mechanism of SiC power MOSFETs (2016)
Conference Proceeding
Fayyaz, A., Castellazzi, A., Romano, G., Riccio, M., Urresti, J., & Wright, N. (2016). UIS failure mechanism of SiC power MOSFETs.

This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown even... Read More about UIS failure mechanism of SiC power MOSFETs.

Body diode reliability investigation of SiC power MOSFETs (2016)
Journal Article
Fayyaz, A., Romano, G., & Castellazzi, A. (2016). Body diode reliability investigation of SiC power MOSFETs. Microelectronics Reliability, 64, 530-534. https://doi.org/10.1016/j.microrel.2016.07.044

A special feature of vertical power MOSFETs, in general, is the inbuilt body diode which could eliminate the need of having to use additional anti-parallel diodes for current freewheeling in industrial inverter applications: this, clearly, subject to... Read More about Body diode reliability investigation of SiC power MOSFETs.

Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs (2016)
Conference Proceeding
Romano, G., Riccio, M., Maresca, L., Fayyaz, A., & Castellazzi, A. (in press). Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs.

This work aims to present an investigation on short-circuit (SC) failure behaviour of SiC Power MOSFETs due to the onset of thermal runaway. As inferable from experimental outcomes, it is related to the formation of hotspot, whose exact location is m... Read More about Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs.

A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs (2016)
Journal Article
Romano, G., Fayyaz, A., Riccio, M., Maresca, L., Breglio, G., Castellazzi, A., & Irace, A. (2016). A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4(3), 978-987. https://doi.org/10.1109/JESTPE.2016.2563220

The behavior of Silicon Carbide Power MOSFETs under stressful short circuit conditions is investigated in this paper. Illustration of two different short-circuit failure phenomena for Silicon Carbide Power MOSFETs are thoroughly reported. Experimenta... Read More about A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs.

SiC power MOSFETs performance, robustness and technology maturity (2016)
Journal Article
Castellazzi, A., Fayyaz, A., Romano, G., Yang, L., Riccio, M., & Irace, A. (2016). SiC power MOSFETs performance, robustness and technology maturity. Microelectronics Reliability, 58, https://doi.org/10.1016/j.microrel.2015.12.034

Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discus... Read More about SiC power MOSFETs performance, robustness and technology maturity.

High temperature pulsed-gate robustness testing of SiC power MOSFETs (2015)
Journal Article
Fayyaz, A., & Castellazzi, A. (2015). High temperature pulsed-gate robustness testing of SiC power MOSFETs. Microelectronics Reliability, 55(9-10), 1724-1728. https://doi.org/10.1016/j.microrel.2015.06.141

© 2015 Elsevier Ltd. Silicon Carbide (SiC) gate oxide reliability still remains a crucial issue and is amongst the important consideration factors when it comes to the implementation of SiC MOS-based devices within industrial power electronic applica... Read More about High temperature pulsed-gate robustness testing of SiC power MOSFETs.