@inproceedings { , title = {Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs}, abstract = {This paper investigates the effect of negative gate bias voltage (VGS) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device’s ability to withstand energy dissipation during avalanche regime is a connoting figure of merit for all applications requiring load dumping and/or benefiting from snubber-less converter design. The superior material properties of SiC material means that SiC MOSFETs even at 1200V exhibit significant intrinsic avalanche robustness.}, conference = {29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)}, note = {OL. 27.02.2018}, organization = {Sapporo, Japan}, publicationstatus = {Published}, url = {https://nottingham-repository.worktribe.com/output/862170}, keyword = {avalanche ruggeddness, silicon carbide, unclamped inductive swithching, power MOSFET, robustness}, year = {2017}, author = {Fayyaz, Asad and Castellazzi, Alberto and Romano, G. and Riccio, M. and Urresti, J. and Wright, N.} }