@article { , title = {Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions}, abstract = {A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as the magnetic random-access memory, magnetic sensors and programmable logic devices. In particular, MTJs based on two-dimensional van der Waals (vdW) heterostructures offer unprecedented opportunities for low power consumption and miniaturization of spintronic devices. However, their operation at room temperature remains a challenge. Here, we report a large tunnel magnetoresistance (TMR) of up to 85\% at room temperature (T = 300 K) in vdW MTJs based on a thin (< 10 nm) semiconductor spacer WSe2 layer embedded between two Fe3GaTe2 electrodes with intrinsic above-room-temperature ferromagnetism. The TMR in the MTJ increases with decreasing temperature up to 164\% at T = 10 K. The demonstration of TMR in ultra-thin MTJs at room temperature opens a realistic and promising route for next-generation spintronic applications beyond the current state of the art.}, doi = {10.1088/0256-307x/39/12/128501}, eissn = {1741-3540}, issn = {0256-307X}, issue = {12}, journal = {Chinese Physics Letters}, publicationstatus = {Published}, publisher = {IOP Publishing}, url = {https://nottingham-repository.worktribe.com/output/13752816}, volume = {39}, keyword = {General Physics and Astronomy}, year = {2022}, author = {Zhu, Wenkai and Xie, Shihong and Lin, Hailong and Zhang, Gaojie and Wu, Hao and Hu, Tiangui and Wang, Ziao and Zhang, Xiaomin and Xu, Jiahan and Wang, Yujing and Zheng, Yuanhui and Yan, Faguang and Zhang, Jing and Zhao, Lixia and Patanè, Amalia and Zhang, Jia and Chang, Haixin and Wang, Kaiyou} }