M. Riccio
High-Temperature validated SiC power MOSFET model for flexible robustness analysis of multi-chip structures
Riccio, M.; d'Alessandro, V.; Romano, G.; Maresca, L.; Breglio, G.; Irace, A.; Castellazzi, A.
Authors
V. d'Alessandro
G. Romano
L. Maresca
G. Breglio
A. Irace
A. Castellazzi
Abstract
This paper presents a statistical analysis on the effect of parallel connection of SiC power MOSFETs in high current applications. To this purpose, a reliable temperature-dependent SPICE model is calibrated on static and dynamic experimental curves of 1.2kV-36A commercial SiC MOSFET. The statistical fluctuation of threshold voltage and on-resistance is evaluated on 20 device samples and modeled with Gaussian functions. The proposed analysis, based on SPICE electrothermal Monte Carlo simulations, is then aimed to improve the design of high current systems with multi-chip devices. Therefore, the study is focused on the evaluation of current and energy unbalance during device switching under inductive load. Results achieved for nominal switching condition and out-of-SOA current levels are discussed.
Citation
Riccio, M., d'Alessandro, V., Romano, G., Maresca, L., Breglio, G., Irace, A., & Castellazzi, A. (2018). High-Temperature validated SiC power MOSFET model for flexible robustness analysis of multi-chip structures. In Proceedings of the 30th International Symposium on Power Semiconductor Devices & ICs May 13-17, 2018, Chicago, USA (443-446). https://doi.org/10.1109/ISPSD.2018.8393698
Conference Name | 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
---|---|
Conference Location | Chicago, IL, USA |
Start Date | May 13, 2018 |
End Date | May 17, 2018 |
Acceptance Date | Dec 22, 2017 |
Online Publication Date | Jun 25, 2018 |
Publication Date | Jun 25, 2018 |
Deposit Date | Sep 11, 2018 |
Publicly Available Date | Sep 12, 2018 |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 443-446 |
Series ISSN | 1946-0201 |
Book Title | Proceedings of the 30th International Symposium on Power Semiconductor Devices & ICs May 13-17, 2018, Chicago, USA |
ISBN | 9781538629277 |
DOI | https://doi.org/10.1109/ISPSD.2018.8393698 |
Public URL | https://nottingham-repository.worktribe.com/output/1069984 |
Publisher URL | https://ieeexplore.ieee.org/document/8393698/ |
Files
High-Temperature Validated SiC Power MOSFET Model For Flexible Robustness Analysis Of Multi-chip Structures
(737 Kb)
PDF
Downloadable Citations
About Repository@Nottingham
Administrator e-mail: digital-library-support@nottingham.ac.uk
This application uses the following open-source libraries:
SheetJS Community Edition
Apache License Version 2.0 (http://www.apache.org/licenses/)
PDF.js
Apache License Version 2.0 (http://www.apache.org/licenses/)
Font Awesome
SIL OFL 1.1 (http://scripts.sil.org/OFL)
MIT License (http://opensource.org/licenses/mit-license.html)
CC BY 3.0 ( http://creativecommons.org/licenses/by/3.0/)
Powered by Worktribe © 2024
Advanced Search