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High-Temperature validated SiC power MOSFET model for flexible robustness analysis of multi-chip structures

Riccio, M.; d'Alessandro, V.; Romano, G.; Maresca, L.; Breglio, G.; Irace, A.; Castellazzi, A.

High-Temperature validated SiC power MOSFET model for flexible robustness analysis of multi-chip structures Thumbnail


Authors

M. Riccio

V. d'Alessandro

G. Romano

L. Maresca

G. Breglio

A. Irace

A. Castellazzi



Abstract

This paper presents a statistical analysis on the effect of parallel connection of SiC power MOSFETs in high current applications. To this purpose, a reliable temperature-dependent SPICE model is calibrated on static and dynamic experimental curves of 1.2kV-36A commercial SiC MOSFET. The statistical fluctuation of threshold voltage and on-resistance is evaluated on 20 device samples and modeled with Gaussian functions. The proposed analysis, based on SPICE electrothermal Monte Carlo simulations, is then aimed to improve the design of high current systems with multi-chip devices. Therefore, the study is focused on the evaluation of current and energy unbalance during device switching under inductive load. Results achieved for nominal switching condition and out-of-SOA current levels are discussed.

Citation

Riccio, M., d'Alessandro, V., Romano, G., Maresca, L., Breglio, G., Irace, A., & Castellazzi, A. (2018). High-Temperature validated SiC power MOSFET model for flexible robustness analysis of multi-chip structures. In Proceedings of the 30th International Symposium on Power Semiconductor Devices & ICs May 13-17, 2018, Chicago, USA (443-446). https://doi.org/10.1109/ISPSD.2018.8393698

Conference Name 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Conference Location Chicago, IL, USA
Start Date May 13, 2018
End Date May 17, 2018
Acceptance Date Dec 22, 2017
Online Publication Date Jun 25, 2018
Publication Date Jun 25, 2018
Deposit Date Sep 11, 2018
Publicly Available Date Sep 12, 2018
Publisher Institute of Electrical and Electronics Engineers
Pages 443-446
Series ISSN 1946-0201
Book Title Proceedings of the 30th International Symposium on Power Semiconductor Devices & ICs May 13-17, 2018, Chicago, USA
ISBN 9781538629277
DOI https://doi.org/10.1109/ISPSD.2018.8393698
Public URL https://nottingham-repository.worktribe.com/output/1069984
Publisher URL https://ieeexplore.ieee.org/document/8393698/

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